Influence of Mg doping level at the initial growth stage on the gate reliability of p-GaN gate HEMTs

Abstract This letter has studied the gate reliability of p-GaN high electron mobility transistors (HEMTs) influenced by Mg doping level at initial growth stage layer. Normally-off HEMTs with fabricated relatively low and concentration have been analyzed compared based on their performances various statuses as-fabricated, forward step-stressed, reverse step-stressed long-term stressed. It reveals that over-doping a detrimental effect through degrading PIN diode formed p-GaN/AlGaN/GaN structure. Severe drain current reduction, threshold voltage instability leakage increase observed after being negatively stressed due to high-density defects acting as apparent acceptor-like traps induced over-doping. The detailed studies performance concentrations give greater depth understanding realize HEMTs.